Giant Tunnel Magnetoresistance at Room Temperature for Junctions using Full-Heusler Co2FeAl0.5Si0.5 Electrodes
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概要
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The authors have investigated the tunnel magnetoresistance (TMR) effect of magnetic tunnel junctions (MTJs) with Co2FeAl0.5Si0.5 full-Heusler electrodes and a MgO barrier in the thickness range of 1.5–2.5 nm. A cross-sectional transmission electron micrograph showed the epitaxial growth of both the upper and lower Co2FeAl0.5Si0.5 layers and a MgO barrier and some distortion in the MgO barrier after annealing above 400 °C. An exponential dependence of resistance $\times$ area product on MgO barrier thickness was observed. TMR ratio was strongly affected by MgO barrier thickness, exhibiting maxima of 220% at room temperature and 390% at 5 K. The latter corresponds to the spin polarization of 0.81. It was also found that the features of this MTJ include a small asymmetry voltage and weak temperature dependence of its TMR ratio.
- 2007-05-25
著者
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Tezuka Nobuki
Department Of Applied Physics Faculty Of Engineering Tohoku University
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Sugimoto Satoshi
Department Of Materials Science Graduate School Of Engineering Tohoku University
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Inomata Koichiro
CREST-JST, Saitama 332-0012, Japan
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Ikeda Naomichi
Department of Materials Science, Graduate School of Engineering, Tohoku University, 6-6-02 Aobayama, Sendai 980-8579, Japan
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