高周波スパッタ中の炭素微粒子発生と成長過程

概要

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Plasma sputtering technique has been widely used for thin film coating technology such as microelectronics, bioelectronics, and so on. It is possible to generate particles in the sputtering plasma and they cause a contamination to the films. The following results on particles have been obtained by the capacitively coupled radio frequency (RF) plasma sputtering without a magnetic field using a carbon target. In the case of the sputtering mode with high power of 200-300 W, particles are not formed in plasma. However, when changing from the sputtering mode to the non-sputtering mode with low power of 40W, particles were detected and then were collected near a sheath edge of the target. In the non-sputtering mode, particles were grown with time and then their position shifted from the sheath edge to plasma region. Subsequently, these particles fell because of an unbalance between gravity and electrostatic force acted on particles. It was revealed that the growth rate increases with time of the sputtering mode and, in particular with the gas pressure.
日本真空協会の論文
2008-04-20