超高出力青紫色半導体レーザアレイ

概要

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This paper describes the development of super-high-power (SHP) AlGaInN-based blue-violet laser diode (LD) arrays. In 2001, the LD arrays were successfully fabricated using epitaxially laterally overgrown GaN substrates. The LD array consisted of 11 laser chips, each with 4 stripe emitters monolithically integrated. A maximum light output power of 4.2 W under continuous-wave (cw) operation at 25°C was achieved for the first time, demonstrating the highly uniform quality of the fabricated laser chips. In 2003, we reported a new SHP blue-violet LD composed of a single broad-area stripe emitter on a GaN substrate. A maximum light output power of 0.94 W under cw operation at 20 °C was achieved for the sample with the stripe width of 10 μm. An array of 11 of these LDs was also successfully fabricated, producing a combined light output power of over 6.1 W under cw operation at 20 °C.
社団法人電気学会の論文
2005-02-01