Characterization of In0.46Ga0.54P/n +-GaAs Heterostructures By Photoellipsometry
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概要
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Photoellipsometry, a contactless optical method, was used for the characterization of In0.46Ga0.54P/ n+-GaAs heterostructures exposed to room air. Two samples were studied, each containing an undoped In0.46Ga0.54P layer of thickness L (L=40 and 100 nm) grown on top of a heavily doped (100) GaAs substrate by metal-organic chemical vapor deposition. The measured spectra were analyzed using the Franz-Keldysh theory, with inclusion of broadening effects. The results of our specral analysis indicate that, for each sample investigated, there existed an almost uniform built-in electric field in the top layer. Using the built-in field strength obtained from the spectral analysis and the In0.46Ga0.54P layer thickness, we found that the surface Fermi level for each sample was pinned near mid-band-gap energy of In0.46Ga0.54P, with a value of 0.94–0.95 eV.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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SAITOH Tadashi
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
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Xiong Y‐m
Division Of Electronic And Information Engineering Tokyo University Of Agriculture And Technology
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Hyuga F
Ntt System Electronics Lab. Kanagawa Jpn
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Watanabe Kenichi
Division Of Cardiology Tsubame Rosai Hospital
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Xiong Yi-ming
Division Of Electronic And Information Engineering Tokyo University Of Agriculture And Technology
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Hyuga Fumiaki
NTT LSI Laboratories
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Watanabe Kenichi
Division Of Cardiology Niigata University Graduate School Of Medical And Dental Sciences
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Watanabe Kenichi
Division Of Electronic And Information Engineering Tokyo University Of Agriculture And Technology
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Saitoh Tadashi
Division Of Electronic And Information Engineering Tokyo University Of Agriculture And Technology
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Saitoh Tadashi
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
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