Optical Characterization of Very Thin Hydrogenated Amorphous Silicon Films Using Spectroscopie Ellipsometry

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概要

• 論文の詳細を見る

• Optical properties of very thin amorphous silicon films have been characterized by means of spectroscopic ellipsometry. Second derivatives of imaginary dielectric functions with respect to energy are compared. Etching-off the surface oxide is effective in determining the correct film thickness and dielectric functions. Complex refractive indices are obtained for films thinner than 50 nm. Calculated optical energy gap is found to increase for thinner films. The tendency is ascribed to the existence of a thin interface layer consisting of amorphous silicon and void.

• 社団法人応用物理学会の論文
• 1991-11-15

著者

• SAITOH Tadashi

  Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric

• Iida Shigeo

  Technical Research Division Kawasaki Steel Corp.

• HORI Nobuyasu

  Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric

• SUZUKI Katsuyuki

  Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric

• Hori Nobuyasu

  Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul

• Suzuki Katsuyuki

  Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul

• Saitoh Tadashi

  Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul

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