InGaxAs1-x/GaAs量子井戸構造のエリプソメトリ-解析〔英文〕 (電子材料技術の新展開<特集>)
スポンサーリンク
概要
- 論文の詳細を見る
- 1995-06-05
著者
-
Tsuchiya Tadayoshi
Advanced Research Center Hitachi Cable Ltd.
-
Saitoh Tadashi
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
-
Watanabe Yukimune
Division Of Electronics & Infomation Engineering Tokyo University Of Agriculture & Technolog
-
Saitoh Tadashi
Division Of Electronics & Infomation Engineering Tokyo University Of Agriculture & Technolog
-
斉藤 忠
Division of Electronics & Infomation Engineering, Tokyo University of Agriculture & Technology
-
渡辺 幸宗
Division of Electronics & Infomation Engineering, Tokyo University of Agriculture & Technology
-
土屋 忠厳
Advanced Research Center, Hitachi Cable Ltd.
関連論文
- Effect of Hydrogen-Radical Annealing for SiO_2 Passivation
- E_1 and E_1+Δ_1 Photoellipsometry Spectra of n-GaAs Modeled by the Franz-Keldysh Theory
- Optical Characterization of Very Thin Hydrogenated Amorphous Silicon Films Using Spectroscopie Ellipsometry
- Built-in Electric Field Strength in InP/n^+-InP Determined by Photoellipsometry and Photoreflectance
- Photoellipsometric Determination of Built-In Electric Field in δ-Doped GaAs
- Characterization of In0.46Ga0.54P/n +-GaAs Heterostructures By Photoellipsometry
- Photoellipsometry Characterization of In_Ga_P/n^+-GaAs Heterostructures
- Photoellipsometry Analysis of n-AlGaAs/GaAs Heterojunction Structures
- InGaxAs1-x/GaAs量子井戸構造のエリプソメトリ-解析〔英文〕 (電子材料技術の新展開)
- Determination of Built-In Electric Field Strength in InP/n^+-InP Structures Using Photoellipsometry