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Ulsi Research And Development Center Mitsubishi Electric Corporation | 論文
- Channel Characteristics and Performance of MIMO E-SDM Systems in an Indoor Time-Varying Fading Environment
- Partially Depleted SOI Technology with Body-Tied Hybrid Trench Isolation for High-Speed System-On-a-Chip Application(Special Issue on Integrated Systems with New Concepts)
- Direct Measurement of Transient Drain Currents in Partially-Depleted SOI N-Channel MOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
- Analyses of the Radiation-Caused Characteristics Change in SOI MOSFETs Using Field Shield Isolation
- Analysis and Optimization of Floating Body Cell Operation for High-Speed SOI-DRAM (Special Issue on Ultra-High-Speed IC and LSI Technology)
- The Influence of the Buried Oxide Defects on the Gate Oxide Reliability and Drain Leakage Currents of the Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
- Analysis of the Delay Distributions of 0.5μm SOI LSIs (Special Issue on SOI Devices and Their Process Technologies)
- Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's (Special Issue on ULSI Memory Technology)
- Low-Voltage Operation of a High-Resistivity Load SOI SRAM Cell by Reduced Back-Gate-Bias Effect
- A Spatial Domain Interference Canceller Using a Multistage Adaptive Array with Precise Timing Estimation (Special Issue on Adaptive Array Antenna Techniques for Advanced Wireless Communications)
- Combining Techniques for Spatial-Domain Path-Diversity Using an Adaptive Array
- EI-1507-1 and-2, Novel Interleukin-1βConverting Enzyme Inhibitors Produced by Streptomyces sp. E-1507
- RES-1214-1 and-2, Novel Non-peptidic Endothelin Type A Receptor Antagonists Produced by Pestalotiopsis sp.
- Control of Carrier Collection Efficiency in n^+p Diode with Retrograde Well and Epitaxial Layers
- Well Structure by High-Energy Boron Implantation for Soft-Error Reduction in Dynamic Random Access Memories (DRAMs)
- Charge Collection Control Using Retrograde Well Tested by Proton Microprobe Irradiation
- High performance 0.2μm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing
- EI-1511-3, -5 and EI-1625-2, Novel Interleukin-1β Converting Enzyme Inhibitors Produced by Streptomyces sp. E-1511 and E-1625 III. Biochemical Properties of EI-1511-3, -5 and EI-1625-2
- EI-1511-3, -5 and EI-1625-2, Novel Interleukin-1β Converting Enzyme Inhibitors Produced by Streptomyces sp. E-1511 and E-1625 I. Taxonomy of Producing Strain, Fermentation and Isolation
- RES-1149-1 and -2, Novel Non-peptidic Endothelin Type B Receptor Antagonists Produced by Aspergillus sp. III. Biochemical Properties of RES-1149-1, -2 and Structure-activity Relationships
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