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ULSI Research Center, Toshiba Corporation | 論文
- Microfabrication of X-Ray Absorber W Utilizing Al_2O_3 as an Etching Mask
- Two Correlated Mechanisms in Thin SiO_2 Breakdown
- Reliability of Structurally Modified Ultra-Thin Gate Oxides
- Fabrication of an ultra Low Stress Tungsten Absorber for X-Ray Masks : Lithography Technology
- A New Reverse Base Current (RBC) of the Bipolar Transistor Induced by Impact Ionization
- Scatterings of Shallow Threshold Voltage on Si-Implanted WN Self-Alignment Gate GaAs Metal-Semiconductor Field-Effect Transistors on Different Composition 2-Inch Substrates by Growing in Three Kinds of Furnaces
- Mobility Profiles in Self-Aligned WN_X Undoped AlGaAs/n-GaAs/Undoped AlGaAs Doped-Channel Hetero-MISFETs
- Representative Figure Method for Proximity Effect Correction [II]
- Mobility Profiles in Submicron WN_x-BPLDD-GaAs MESFETs
- Effects of Mask Line-and-Space Ratio in Replicating near-0.1-μm Patterns in X-Ray Lithography
- Sub-0.15 μm Pattern Replication Using a Low-Contrast X-Ray Mask
- Analysis of Sub-0.15 μm Pattern Replication in Synchrotron Radiation Lithography
- Standby/Active Mode Logic for Sub-1-V Operating ULSI Memory (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
- Temperature Dependence of Electron Mobility in Si Inversion Layers
- An Advanced NAND-Structure Cell Technology for Reliable 3.3 V 64 Mb Electrically Erasable and Programmable Read Only Memories (EEPROMs)
- Josephson Effect in Wide Superconducting Bridges Made by Epitaxial Ba_2YCu_3O_x Thin Films on YSZ/Si(100)
- Prebake Effects in Chemical Amplification Electron-Beam Resist : Resist and Processes
- Prebake Effects in Chemical Amplification Electron-Beam Resist
- Simulation Study on Phase-Shifting Masks for Isolated Patterns : Photolithography
- Simulation Study on Phase-Shifting Masks for Isolated Patterns