スポンサーリンク
ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan | 論文
- Influence of Puled Electron Cyclotron Resonance Plasma on Gate Electrode Etching
- Reduction of Charge Build-up with High-Power Pulsed Electron Cyclotron Resonance Plasma
- Evaluation of Electron Shading Charge Buildup Damage Using Metal-Nitride-Oxide-Silicon Capacitors
- Etching Characteristics of WSi_2 with Pulsed-Electron Cyclotron Resonance Plasma
- Precise Evaluation of Pattern Distortion with Variation of the Impurity Concentration and Conductivity of Silicon Films
- SiO_2 Etching in C_4F_8/O_2 Electron Cyclotron Resonance Plasma
- Pulsed Plasma Processing for Reduction of Profile Distortion Induced by Charge Buildup in Electron Cyclotron Resonance Plasma
- Profile Control of poly-Si Etching in Electron Cyclotron Resonance Plasma
- Mechanism of Reactive Ion Etching Lag in WSi_2 Etching Using Electron Cyclotron Resonance Plasma
- Effect Plasma Transport on Etched Profiles with Surface Topography in Diverging Field Electron Cyclotron Resonance Plasma
- Disk-Shaped Stacked Capacitor Cell for 256 Mb Dynamic Random-Access Memory
- Mechanism of AlCu Film Corrosion
- Profile Distortion Caused by Local Electric Field in Polysilicon Etching
- Influence of Poly-Si Potential on Profile Distortion Caused by Charge Accumulation
- Kikuchi-Band Analysis of X-Ray Photoelectron Diffraction Fine Structure of Si(100) by Precise Angle-Resolved X-Ray Photoelectron Spectroscopy
- Effect of Electric Field on Electron Cyclotron Resonance Plasma Etching
- Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
- Effect of N_2 Addition on Aluminum Alloy Etching by Electron Cyclotron Resonance Reactive Ion Etching and Magnetically Enhanced Reactive Ion Etching
- Mechanism of Reactive Ion Etching Lag for Aluminum Alloy Etching
- Transformation of Dense Contact Holes during SiO2 Etching