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Toshiba Corporation Semiconductor Company | 論文
- Highly Uniform Deposition of LP-CVD 3i3N4 Films on Tungsten for Advanced Low Resistivity "Poly-Metal" Gate Interconnects
- Electronic Structure of Delafossite-Type Metallic Oxide PdCoO_2
- Electronic Band Structure of SrCuO_2
- Growth and Anisotropic Physical Properties of PdCoo_2 Single Crystals
- Charged Neutrinos and Atoms in the Standard Model : Particles and Fields
- Mini-Charge Non-Conservation in SU(3)_c×SU(2)_L×U(1)_Y Models : Particles and Fields
- Light W_R and the Spontaneous CP Violation. II : Particles and Fields
- Dual-Thickness Gate Oxidation Technology with Halogen/Xenon Implantation for Embedded Dynamic Random Access Memories
- Dual-Thickness Gate Oxidation Technology with Halogen/Xenon Implantation for Embedded DRAMs
- Ultralow-Voltage MTCMOS/SOI Circuits for Batteryless Mobile System(Low-Power System LSI, IP and Related Technologies)
- Selective Multi-Threshold Technique for High-Performance and Low-Standby Applications(Special Section on VLSI Design and CAD Algorithms)
- Correlation of W-Si-N Film Microstructure with Barrier Performance against Cu Diffusion
- Correlation of W-Si-N Film Microstructure with Barrier Performance against Cu Diffusion
- Inlaid Cu Interconnects Employing Ti-Si-N Barrier Metal for ULSI Applications
- Study of LOCOS-Induced Anomalous Leakage Current in Thin Film SOI MOSFET's
- 10-15nm Ultrashallow Junction Formation by Flash-Lamp Annealing
- Statistics of Voronoi Polyhedra in Rapidly Quenched Monatomic Liquids.I.Changes during Rapid-Quenching Process
- An Adder-Free Method for a Small Size π/4 Shift QPSK Signal Generator (Special Section on Analog Circuit Techniques for System-on-Chip Integration)
- Ecker-Grimus-Neufeld Model and the Parametrization of KM Matrix : Particles and Fields
- New Finding of Pt Segregation at the NiSi/Si Interface by Atom Probe