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Silicon Systems Research Laboratories Nec Corporation | 論文
- Corrosion behavior of ion implanted nickel-titanium orthodontic wire in fluoride mouth rinse solutions
- C-11-2 垂直電界に関するバルクMOSFETとSOI-MOSFETの比較
- 素子微細化が真性半導体ボディSOI-MOSFETのI_向上効果に与える影響
- 素子微細化が真性半導体ボディSOI-MOSFETのI_向上効果に与える影響
- 真性チャネルSOI-MOSFETのV_ばらつきに対する電界の二次元効果の影響
- ストライプトゲート真性半導体チャネルSOI-MOSFETのしきい値制御に関するシミュレーション
- Breakdown Mechanisms and Lifetime Prediction for 90nm-node Low-power HfSiON/SiO_2 CMOSFETs
- 1.2nm HfSiON/SiON stacked gate insulators for 65nm-node MISFETs
- Mechanism of Leakage Current Reduction by Adding WO_3 to Crystallized Ta_2O_5 : Structure and Mechanical and Thermal Properties of Condensed Matter
- Paramagnetic Defects Related to Positive Charges in Silicon Oxynitride Films
- Spin-Dependent Trap-Assisted Tunneling Current in Ultra-Thin Gate Dielectrics
- Brillouin Scattering in B_2O_3-Li_2O-LiCl Glass
- Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Fabrication of Dual-disks Microlasers in Thiophene/Phenylene Co-oligomers
- Fabrication of 0.1μm Line-and-Space Patterns using Soft X-Ray Reduction Lithography
- Sub-0.1 μm Resist Patterning in Soft X-Ray (13 nm) Projection Lithography
- Alternative Interpretation of Impulse Response of Phonon-Polaritons
- Excitation of Phonon-Polaritons with Asymmetric Transient Grating
- Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
- Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN