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Silicon Systems Research Laboratories Nec Corporation | 論文
- Optical Absorption in Polarized Ga_In_xN/GaN Quantum Wells(Semiconductors)
- Biexciton Luminescence from GaN Epitaxial Layers
- Time-Resolved Observation of Laser-Induced Surface Reaction for Si/Cl_2 System Using Second-Harmonic Generation
- Excitonic Emission in GaN Films on AlN Substrates Using Microwave-Excited N Plasma Method
- Observation of Etching Reaction for Si/XeF_2 System Using Second-Harmonic Generatiorn
- Newly Developed Polymer-Stabilized Ferroelectric Liquid Crystals: Microsized Bistable Domains and Monostable V-Shaped Switching
- ZrB_2 Substrate for Nitride Semiconductors
- Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
- Study on the Seeded Growth of AlN Bulk Crystals by Sublimation
- Highly Accurate Process Proximity Correction Based on Empirical Model for 0.18 μm Generation and Beyond
- Development of An Accurate Optical Proximity Correction System for 1 Gbit Dynamic Random Access Memory Fabrication
- A Study of High Pretilt Angle Generation in Nematic Liquid Crystal (5CB) on Rubbed Polythiophene Surfaces with Alkyl Chain Lengths
- Effect of the Molecular Structure of Weakly Rubbed Organic Solvent Soluble Polyimides with Trifluoromethyl Moieties on Anchoring Strength of Liquid Crystals
- Anisotropic Dispersion Force Effects for Alignment of Liquid Crystals on Rubbed Polystyrene Surfaces
- Effect of the Polymer Tilt Angle for Generation of Pretilt Angle in Nematic Liquid Crystal on Rubbed Polyimide Surfaces
- Effects of Conjugation of Mesogenic Core of Nematic Liquid Crystals for Polar Anchoring Energy and Surface Order Parameter on Rubbed Polyimide Films
- Pretilt Angles of Liquid Crystal on Organic-Solvent-Soluble Polyimide Alignment Films
- Synthesis of a Novel Organic-Solvent-Soluble Polyimide and Its Application to Alignment Film for Liquid Crystal Displays
- 70nm MOSFET Device Simulation Considering Two Dimensional Channel Quantization and Self-Consistent Non-Equilibrium Carrier Transport
- アクセプタからの電界の二次元的発散を考慮したSOI-MOSFETのしきい値電圧モデル