70nm MOSFET Device Simulation Considering Two Dimensional Channel Quantization and Self-Consistent Non-Equilibrium Carrier Transport

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概要

• 論文の詳細を見る
• 2001-09-25

著者

• Werner Philipp

  Silicon Systems Research Laboratories Nec Corporation

• EZAKI Tatsuya

  Silicon Systems Research Laboratories, NEC Corporation

• HANE Masami

  Silicon Systems Research Laboratories, NEC Corporation

• Hane Masami

  Silicon Systems Research Laboratories Nec Corporation

• Ezaki Tatsuya

  Silicon Systems Research Laboratories Nec Corporation

関連論文

• 70nm MOSFET Device Simulation Considering Two Dimensional Channel Quantization and Self-Consistent Non-Equilibrium Carrier Transport
• Effects of Selecting Channel Direction in Improving Performance of Sub-100nm MOSFETs Fabricated on (110) Surface Si Substrate
• Three Dimensional MOSFET Simulation for Analyzing Statistical Dopant-Induced Fluctuations Associated with Atomistic Process Simulator(the IEEE International Coference on SISPAD '02)
• Effects of Selecting Channel Direction in Improving Performance of Sub-100 nm MOSFETs Fabricated on (110) Surface Si Substrate

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