Hane Masami | Silicon Systems Research Laboratories Nec Corporation
スポンサーリンク
概要
関連著者
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Hane Masami
Silicon Systems Research Laboratories Nec Corporation
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Ezaki Tatsuya
Silicon Systems Research Laboratories Nec Corporation
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EZAKI Tatsuya
Silicon Systems Research Laboratories, NEC Corporation
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Werner Philipp
Silicon Systems Research Laboratories Nec Corporation
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HANE Masami
Silicon Systems Research Laboratories, NEC Corporation
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NAKAMURA Hidetatsu
Silicon Systems Research Labs., NEC Corporation
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IWAMOTO Toshiyuki
Silicon Systems Research Labs., NEC Corporation
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Yamamoto Toyoji
Silicon Systems Research Laboratories Nec Corporation
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Ezaki T
Tokyo Univ. Sci. Noda‐shi Jpn
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IKEZAWA Takeo
NEC Infomatec Systems Ltd.
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NOTSU Akio
NEC Infomatec Systems Ltd.
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TANAKA Katsuhiko
Silicon Systems Research Laboratories,NEC Corporation
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Ikezawa Takeo
Platform Software Division Nec Infomatec Systems Ltd.
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Togo Mitsuhiro
Silicon Systems Research Labs. Nec Corporation
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Ikarashi Nobuyuki
Silicon Systems Research Laboratories Nec Corporation
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Tanaka Katsuhiko
Silicon Systems Research Laboratories Nec Corporation
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Hane Masami
Silicon Systems Research Labs., NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Yamamoto Toyoji
Silicon Systems Research Labs., NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Ikarashi Nobuyuki
Silicon Systems Research Labs., NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Togo Mitsuhiro
Silicon Systems Research Labs., NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Ezaki Tatsuya
Silicon Systems Research Labs., NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Ikezawa Takeo
Platform Software Division, NEC Infomatec Systems, Ltd., 3-2-1 Sakado, Takatsu-ku, Kawasaki, Kanagawa 213-0012, Japan
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Iwamoto Toshiyuki
Silicon Systems Research Labs., NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Nakamura Hidetatsu
Silicon Systems Research Labs., NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
著作論文
- 70nm MOSFET Device Simulation Considering Two Dimensional Channel Quantization and Self-Consistent Non-Equilibrium Carrier Transport
- Three Dimensional MOSFET Simulation for Analyzing Statistical Dopant-Induced Fluctuations Associated with Atomistic Process Simulator(the IEEE International Coference on SISPAD '02)
- Effects of Selecting Channel Direction in Improving Performance of Sub-100 nm MOSFETs Fabricated on (110) Surface Si Substrate