Three Dimensional MOSFET Simulation for Analyzing Statistical Dopant-Induced Fluctuations Associated with Atomistic Process Simulator(<Special Issue>the IEEE International Coference on SISPAD '02)

概要

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A realistic 3-D process/device simulation method was developed for investigating the fluctuation in device characteristics induced by the statistical nature of the number and position of discrete dopant atoms. Monte Carlo procedures are applied for both ion implantation and dopant diffusion/activation simulations. Atomistic potential profile for device simulation is calculated from discrete dopant atom positions by incorporating the long-range part of Coulomb potential. This simulation was used to investigate the variations in characteristics of sub-100 nm CMOS devices induced by realistic dopant fluctuations considering practical device fabrication processes. In particular, sensitivity analysis of the threshold voltage fluctuation was performed in terms of the independent dopant contribution, such as that of the dopant in the source/drain or channel region.
社団法人電子情報通信学会の論文
2003-03-01