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Semiconductor Materials And Devices Laboratory Korea Institute Of Science And Technology | 論文
- Maskless Selective Epitaxial Growth on Patterned GaAs Substrates by Metalorganic Chemical Vapor Deposition
- Electrical Properties of Heavily Carbon-Doped GaAs Epilayers Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition Using CBr_4
- Effects of Bi Content on Electrical Properties of Pt/SrBi_2Nb_2O_9/Si Ferroelectric Gate Structure
- Effects of Bi Content on Electrical Properties of Pt/SrBi_2Nb_2O_9/Si Ferroelectric Gate Structure
- A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
- Metal Oxide Semiconductor Field Effect Transistor Characteristics with Iridium Gate Electrode on Atomic Layer Deposited ZrO_2 High-k Dielectrics
- Improvement of the Reliability of a Cu/W-N/SiOF Multilevel Interconnect by Inserting Plasma Enhanced Chemical Vapor Deposited W-N Thin Film
- Tungsten Nanodot Arrays Patterned Using Diblock Copolymer Templates
- Effect of hydrogen annealing on electrical properties of Bi-layered perovskite thin films
- Effect of hydrogen annealing on electrical properties of Bi-layered perovskite thin films
- Effects of Rapid Thermal Annealing on the Electrical Properties of Cobalt Contact to p-GaN
- Electrical Characteristics of Pt/SrBi_2 Ta_2O_9/Ta_2O_5/Si Using Ta_2O_5 as the Buffer Layer
- Growth and Characterization of Triangular InGaAs/GaAs Quantum Wire Structures Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- Effects of Morphological Changes of Pt/SrBi_2Ta_2O_9 Interface on the Electrical Properties of Ferroelectric Capacitor
- Electrical Properties of Pt/SrBi_2Ta_2O_9/CeO_2/SiO_2/Si Structure for Nondestruetive Readout Memory
- N_2^+ Implantation Approaches for Improving Thermal Stability of Cu/Mo/Si Contact Structure
- Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Field Efffect Transistors Using a Pt/SrBi_2Ta_2O_9/Y_2O_3/Si Structure
- Fabrication of Metal-Ferroelectric-Insulator-Semiconductor Field Effect Transistor (MEFISFET) Using Pt-SrBi_2Ta_2O_9-Y_2O_3-Si Structure
- Characteristics of Quantum wire structures grown by low pressure MOCVD
- Characteristics of Quantum wire structures grown by low pressure MOCVD