スポンサーリンク
Satellite Venture Business Laboratory, The University of Tokushima | 論文
- Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
- High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors(Heterostructure Microelectronics with TWHM2003)
- Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
- Influence of Pyramidal Defects on Photoluminescence of Mg-doped AlGaN/GaN Superlattice Structures
- High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
- V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate : Surfaces, interfaces, and Films
- Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films : Surfaces, Interfaces, and Films
- Surface Smoothing Mechanism of AIN Film by Initially Alternating Supply of Ammonia
- Role of Dislocation in InGaN Phase Separation
- Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer
- Two-Dimensional Device Simulation of 0.05 μm-Gate AlGaN/GaN HEMT(Heterostructure Microelectronics with TWHM2003)
- Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vpor Deposition
- Photonic Gaps in Reduced-Order Colloidal Particulate Assemblies
- Microfabrication and Characteristics of Two-Dimensional Photonic Crystal Structures in Vitreous Silica
- Three-Dimensional Microstructures Created by Laser Microfabrication Technology
- Three-Dimensional Optical Data Storage in Vitreous Silica
- High Temperature Reactive Ion Etching of GaN and AlGaN Using Cl_2 and CH_4 Plasma
- AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers
- Size Dependence of Rotation Frequency of Individual Laser Trapped Liquid Crystal Droplets
- Crosstalk in Photoluminescence Readout of Three-Dimensional Memory in Vitreous Silica by One- and Two-Photon Excitation