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Samsung Electronics Co. Ltd. Kyungki‐do Kor | 論文
- Preparation and Characterization of Iridium Oxide Thin Films Grown by DC Reactive Sputtering
- High frequency gate bias response of carbon nanotube field effect transistor
- Microscopic Brillouin Scattering Study of Relaxation Phenomena in Low Molecular Weight Alcohols of Ethanol and Methanol
- Data Retention Characteristics of MONOS Devices with High-k Dielectrics and High-work Function Metal-gates for Multi-gigabit Flash Memory
- Effects of Pb/Pt Top Electrode on Hydrogen-Induced Degradation in Pb(Zr, Ti)O_3(Semiconductors)
- Ni Germano-Salicide Technology for High Performance MOSFETs
- Ni Germano-Salicide Technology for High Performance MOSFETs
- Effect of Nucleation Density on the Morphology of Diamond Thin Films
- Fabrication of Dual Gate Transistor with Novel In-Situ Boron-Doped LPCVD Method
- Optical Pickup for Compact Disc Player Using Computer-Generated Hologram and Reflection-Type Grating
- FABRICATION OF POLY-SI TFT ON THE GLASS SUBSTRATE BY METAL-INDUCED LATERAL CRYSTALLIZATION
- FABRICATION OF POLY-SI TFT ON THE GLASS SUBSTRATE BY METAL-INDUCED LATERAL CRYSTALLIZATION
- Highly Reliable Ring Type Contact Scheme for High Density PRAM
- Strong-Strong Beam-Beam Simulation for a Muon-Collider Ring : Instrumentation, Measurement, and Fabrication Technology
- Design of a Transverse Ionization-Cooling Channel in Solenoidal Focusing Field : Instrumentation, Measurement, and Fabrication Technology
- A Novel LOCOS-Trench Combination Isolation Method for Maximum Chemical Mechanical Polishing(CMP) Process Window
- Robust 2-D Stack Capacitor Technologies for 64Mb 1T1C FRAM
- GST Confined Structure and Integration of 64Mb PRAM
- Robust 3-Metallization BEOL Process for 0.18μm Embedded FRAM
- Integration and Electrical Properties of Novel Ferroelectric Capacitors for 0.25μm 1 Transistor 1 Capacitor Ferroelectric Random Access Memory (1T1C FRAM)