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Samsung Electronics Co. Ltd. Kyungki‐do Kor | 論文
- Novel Capacitor Technology for Sub-Quarter Micron 1T1C FRAM
- Charge Loss Due to AC Program Disturbance Stresses in EPROMs
- Elimination of Al Line and Via Resistance Degradation under HTS Test in Application of F-Doped Oxide as Intermetal Dielectric
- The Origin of Micro-Loading Effect of TEOS-O3 Oxide II
- A Low Temperature PECVD Process of Phosphorous Doped Hydrogenated Microcrystalline Silicon Films
- A Low Temperature PECVD Process of Phosphorous Doped Hydrogenated Microcrystalline Silicon Films
- Synthesis, Characterization and Properties of Poly(1-hexy1-3,4-dimethy1-2,5-pyrrolylene)
- Dynamic Aperture for High-Brilliance Optics of the Photon Factory Storage Ring
- Dielectric Properties of Pb(Zr,Ti)O_3 Heterolayered Films Prepared by Sol-Gel Method
- The Effect of Stress on Solid-Phase Epitaxial RegroWth in As^+ -Implanted Two-Dimensional Amorphized Si : Semiconductors
- Reaction of Hydrogen Fluoride Gas at High Temperatures with Silicon Oxide Film and Silicon Surface
- Study On Characteristics of Ge Based ARL for DUV Lithography
- Study On Characteristics of Ge Based ARL for DUV Lithography
- New ArF Single-Layer Resist for 193nm Lithography
- Holographic Grating Formation by Wet Etching of Amorphous As_Ge_Se_S_ Thin Film
- Reactive Dyeing of Cotton in Water-Organic Solvent Mixture
- Dyeability of C.I.Disperse Violet 1 on Polyester Fiber in Alkanes as Dyeing Media
- A Novel LOCal Oxidation of Silicon (LOCUS)-Type Isolation Technology Free of the Field Oxide Thinning Effect
- The Effects of Cu Diffusion in Cu/TIN/SiO_2/Si Capacitors
- High Density FRAM Technology