The Effects of Cu Diffusion in Cu/TIN/SiO_2/Si Capacitors

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概要

• 論文の詳細を見る

• The effects of Cu diffusion in Cu/TiN/SiO_2/Si structures have been evaluated by capacitance -voltage (C-V) measurements. The capacitors were annealed at temperatures between 500℃ and 900℃ for 1h and were stressed at 250℃ for 1 h with positive or negative electric fields of 0.4-1.0 MV/cm. High frequency C-V characteristics of the annealed capacitors were measured before and after bias temperature stress treatment. The device failure due to Cu diffusing into Si substrate was not observed to occur by annealing of up to 700℃ for 1 h.

• 社団法人応用物理学会の論文
• 1999-10-15

著者

• Shin D‐h

  Samsung Electronics Co. Ltd. Kyungki‐do Kor

• Kwak Mi-young

  Department Of Physics Dongguk University

• Kim Ki-nam

  Semiconductor R&d Center Samsung Electronics

• Kang Tae-won

  Department Of Physics Dongguk University

• Shin Dong-hyuk

  Department Of Metallurgical And Materials Eng. Hanyang University

• Kang Tae-won

  Department Of Dermatology And Cutaneous Biology Research Institute Yonsei University College Of Medi

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• The Effects of Cu Diffusion in Cu/TIN/SiO_2/Si Capacitors

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