Reaction of Hydrogen Fluoride Gas at High Temperatures with Silicon Oxide Film and Silicon Surface
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-11-15
著者
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Otsuka T
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Otsuka Toru
Isobe R&d Center Shin-etsu Handotai Co. Ltd.
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Habuka Hitoshi
Isobe R&d Center Shin-etsu Handotai Co. Ltd.
関連論文
- Dominant Overall Chemical Reaction in a Chlorine Trifluoride-Silicon-Nitrogen System at Atmospheric Pressure
- Reaction of Hydrogen Fluoride Gas at High Temperatures with Silicon Oxide Film and Silicon Surface