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Research Center for Integrated Quantum Electronics, Hokkaido University | 論文
- 2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implementation of Nanoprocessor on GaAs Nanowire Network(Session4B: Emerging Devices II)
- 2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implementation of Nanoprocessor on GaAs Nanowire Network(Session4B: Emerging Devices II)
- 電気化学的手法によるInP多孔質構造の形成と高感度化学センサへの応用(半導体のプロセス・デバイス(表面,界面,信頼性),一般)
- W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-μm Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
- III-V Semiconductor Epitaxial Nanowires and Their Applications(Plenary Session)
- III-V Semiconductor Epitaxial Nanowires and Their Applications(Plenary Session)
- III-V semiconductor hetero-structure nanowires by selective area MOVPE
- Electrochemical formation of InP porous structures for their application to photoelectric conversion devices(Session 2B : Graphene and III-Vs)
- Electrochemical formation of InP porous structures for their application to photoelectric conversion devices(Session 2B : Graphene and III-Vs)
- Formation and application of InP porous structures on p-n substrates
- Formation and application of InP porous structures on p-n substrates
- Electrochemical formation and functionalization of InP porous nanostructures and their application to chemical sensors(Session8B: High-Frequency, Photonic and Sensing Devices)
- Electrochemical formation and functionalization of InP porous nanostructures and their application to chemical sensors(Session8B: High-Frequency, Photonic and Sensing Devices)
- Amperometric Detection of Hydrogen Peroxide Using InP Porous Nanostructures
- GaAs DH-HEMT channel coupled InAs quantum dot memory device by selective area metal organic vapor phase epitaxy
- Fabrication of AlGaN/GaN Quantum Nanostructures by Methane-Based Dry Etching and Characterization of Their Electrical Properties
- MOVPE Condition Dependences of MnAs Nanoclusters Grown on GaInAs (111)A Surfaces
- Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates
- Control of Dot Size and Tunneling Barrier Profile in In_Ga_As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates
- Terahertz Wave Filter from Cascaded Thin-Metal-Film Meshes with a Triangular Array of Hexagonal Holes