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Research Center For Interface Quantum Electronics Hokkaido University | 論文
- A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by Metalorganic Vapor Phase Epitaxy: Investigation of Transport Properties
- A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by MOVPE : Investigation of Transport Properties
- In-Situ Characterization of Compound Semiconductor Surfaces by Novel Photoluminescence Surface State Spectroscopy
- A Novel Contactless and Nondestructive Measurement Method of Surface Recombination Velocity on Silicon Surfaces by Photoluminescence
- Self-Assembled InAs Quantum Dots Buried in AlGaAs Barrier and Their Application to Split-Gate HEMT Operating at 77K
- Fabrication of p^+-Gate InAs-Channel HEMT Based on InP
- Fabrication of p^+-Gate InAs-Channel HEMT Based on InP
- Charging Effect of InAs Dots in Split-Gate High Electron Mobility Transistor Structure ( Quantum Dot Structures)
- Regular Array Formation of Self-Assembled InAs Dots Grown on Patterned (111)B GaAs Substrate by MBE
- Study on Metallic Particle Motion and Partial Discharge Characteristics in a GIS Tank Filled with CO_2 and SF_6
- Deep Level Characterization of Submillimeter-Wave GaAs Schottky Diodes Produced by a Novel In-Situ Electrochemical Process
- Simulation and Observation of the Step Bunching Process Grown on GaAs (001) Vicinal Surface by Metalorganic Vapor Phase Epitaxy
- White-noise Properties of YBa_2Cu_3O_ Grain-boundary dc Superconducting Quantum Interference Devices
- Novel Nano-Faceting Structures Grown on Patterned Vicinal(110)GaAs Substrates by Metal-Organic Vapor Phase Epitaxy(MOVPE)
- A Novel Bistable Double-Barrier Resonant Tunnel Diode by Charging Effect of InAs Dots
- Simulation and Observation of the Step Bunching Process Grown on GaAs (001) Vicinal Surface by Metalorganic Vapor Phase Epitaxy
- A High Performance p-Channel Transistor: β-MOS FET
- Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy
- A Novel Bistable Double-Barrier Resonant Tunnel Diode by Charging Effect of InAs Dots
- Regular Array Formation of Self-Assembled InAs Dots Grown on Patterned (111)B GaAs Substrate by MBE