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Research Center For Integrated Quantum Electronics Hokkaido University | 論文
- Fabrication of GaAs/AlGaAs Quantum Dots by Metalorganic Vapor Phase Epitaxy on Patterned GaAs Substrates
- Growth Behavior and Mechanism of Alkyl-Desorption-Limited Epitaxial Growth of GaAs on Exactly Oriented and Vicinal Substrates
- Mechanism of Multiatomic Step Formation durirng Metalorganic Chemical Vapor deposition Growth of GaAs on (001) Vicinal Surface Studied by Atomic Force Microscopy
- 有機金属気相選択成長によるInPナノワイヤの成長と構造相転移(機能ナノデバイス及び関連技術)
- 有機金属気相選択成長によるInPナノワイヤの成長と構造相転移(機能ナノデバイス及び関連技術)
- III-V族化合物半導体ナノワイヤにおける閃亜鉛鉱構造とウルツ鉱構造の構造相転移(安定・準安定:閃亜鉛鉱構造とウルツ鉱構造)
- 有機金属選択成長による半導体ナノワイヤの成長とその特性,AWAD2006)
- 有機金属選択成長による半導体ナノワイヤの成長とその特性
- 有機金属選択成長による半導体ナノワイヤの成長とその特性
- 半導体ナノワイヤとナノデバイス応用
- Fabrication of one-dimensional GaAs channel-coupled InAs quantum dot memory device by selective-area metal-organic vapor phase epitaxy
- Large Modulation of Conductance in Interdigital-Gated HEMT Devices Due to Surface Plasma Wave Interactions
- Large Conductance Modulation in Interdigital Gate HEMT Device due to Surface Plasma Wave Interactions and Its Device Application
- Threshold Behavior of Photoresponse of Plasma Waves by New Photomixer Devices
- Performance of open-gate AlGaN/GaN HFET in various kinds of liquids
- Electrochemical formation of InP porous structures for their application to photoelectric conversion devices(Session 2B : Graphene and III-Vs)
- Electrochemical formation of InP porous structures for their application to photoelectric conversion devices(Session 2B : Graphene and III-Vs)
- Electrochemical Functionalization of InP Porous Nanostructures with a GOD Membrane for Amperometric Glucose Sensors
- Fundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors
- Formation and application of InP porous structures on p-n substrates