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Research Center For Integrated Quantum Electronics Hokkaido University | 論文
- Gate Leakage in AlGaN/GaN Heterostructure Field Effect Transistors and Its Suppression by Novel Al_2O_3 Insulated Gate(Heterostructure Microelectronics with TWHM2003)
- Surface Passivation Process for GaN-Based Electronic Devices Utilizing ECR-CVD SiN_χ Film(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Nitridation of GaP(100)Surfaces by rf Nitrogen Radicals and by Electron Cyclotron Resonance Nitrogen Plasma
- Nitridation of GaP Surfaces by Rf Nitrogen Radicals and by ECR Nitrogen Plasma
- 24aXL-3 量子チューブ中アハロノフ-ボーム効果の光学的検出(24aXL 量子井戸・超格子,領域4(半導体,メゾスコピック系・局在))
- 1Pb-6 超短光パルスを用いたGaAsナノピラーの振動モード観測(ポスターセッション)
- In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2×4) GaAs Surfaces
- In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-Doped MBE-Grown (2x4) GaAs Surfaces
- Degradation of Se-Doped GaAs_P_ Light-Emitting Diodes
- Interface characterization of Al_2O_3/AlGaN structures prepared by atomic layer deposition
- 招待講演 Theoretical study on graphene field-effect transistors (Silicon devices and materials)
- Source and Drain Structures for Suppressing Ambipolar Characteristics of Graphene Field-Effect Transistors
- 招待講演 Theoretical study on graphene field-effect transistors (Electron devices)
- W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-μm Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
- Evaluation of Digitally Controlled PLL by Clock-Period Comparison(Analog Circuits and Related SoC Integration Technologies)
- Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy
- Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure
- Characterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy
- Quantum Well Wire Fabrication Method Using Self-Organized Multiatomic Steps on Vicinal (001) GaAs Surfaces by Metalorganic Vapor Phase Epitaxy
- Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy