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Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation | 論文
- Femtosecond Optical Pulse Compressor Using CS_2 Liquid-Core Fiber with Negative Delayed Nonlinear Response
- Study on Ultrafast Dynamic Behaviors of Different Nonlinear Refractive Index Components in CS_2 Using a Femtosecond Interferometer
- Substrate Dependence of Laser-Induced Damage Threshold of Scandium Oxide High-Reflector Coatings for UV Pulsed Laser
- Influence of Deposition Parameters on Laser Damage Threshold of 355-nm Scandium Oxide-Magnesium Fluoride High-Reflector Coatings
- Highly Selective Si_3N_4/SiOC Etching Using Dual Frequency Superimposed RF Capacitively Coupled Plasma
- Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon
- Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon
- Optimization of Polysilane Structure as Fast-Etching Bottom Antireflective Coating for Deep Ultraviolet Lithography
- Determination of Dielectric Relaxation Time of Langmuir-Films by a Whole-Curve Method Using the Maxwell Displacement Current
- Determination of the Piezoelectric Coefficient of Monolayers on Water Surface by Maxwell-Displacement-Current Measurement
- Sub-1.3 nm Amorphous Tantalum Pentoxide Gate Dielectrics for Damascene Metal Gate Transistors
- Sub 1.3nm Amorphous Ta_2O_5 Gate Dielectrics for Damascene Metal Gate Transistor
- Highly Uniform Low-Pressure Chemical Vapor Deposition (LP-CVD) of Si_3N_4 Film on Tungsten for Advanced Low-Resistivity "Polymetal" Gate Interconnects
- Plasma-Damage-Free Gate Process Using Chemical Mechanical Polishing for 0.1 μm MOSFETs
- Plasma Damage Free Gate Process Using CMP for 0.1um MOSFETs
- Measurements of Impurity Diffusion Coefficients in Ionic Melts with High Accuracy under Microgravity (特集 MSL-1(3))
- A New Stacked-Mask Process Utilizing Spun-on Carbon Film for Sub-130-nm Etching
- Application of Organic Silicon Clusters to Pattern Transfer Process for Deep UV Lithography
- Mechanism of Etch Stop in High Aspect-Ratio Contact Hole Etching
- Optical Proximity Correction Feature Extraction Method Using Reticle Scanning Electron Microscope Images