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Physics Department Hanyang University | 論文
- Line Width Variation due to Global Topography
- Resist Pattern Collapse with Top Rounding Resist Profile
- Microstructural and Electrical Properties of Ba_xSr_1-xTiO_3 Thin Films on Various Electrodes
- Process Proximity Correction by Neural Networks
- Threshold Energy Resist Model for Critical Dimension Prediction
- A Temperature- and Supply-Insensitive Fully On-Chip 1Gb/s CMOS Open-Drain Output Driver for High-Bandwidth DRAMs
- A Decision Feedback Equalizing Receiver for the SSTL SDRAM Interface with Clock-Data Skew Compensation(Integrated Electronics)
- An Analytic Time Jitter Equation of NRZ Signals in Uniformly Loaded PCB Transmission Lines
- Fully On-Chip Current Controlled Open-Drain Output Driver for High-Bandwidth DRAMs
- Characterization of 193 nm Chemically Amplified Resist during Post Exposure Bake and Post Exposure Delay
- Photoresist Exposure Parameter Extraction from Refractive Index Change during Exposure
- An Effective Method for Production of Metal Free Water through Chitosan Deminerilization systems
- Some Properties of Some Graft derivatives of Chitosan
- Numerical Investigation of Defect Printability in Extreme Ultraviolet (EUV) Reflector: Ru/Mo/Si Multilayer System
- The Extraction of Develop Parameters by Using Cross-Sectional Critical Shape Error Method
- Resist Pattern Collapse with Top Rounding Resist Profile
- Effect of Extreme Ultraviolet Light Scattering from the Rough Absorber and Buffer Side Wall