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Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation | 論文
- Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact
- 0.21-fJ GaAs DCFL Circuits Using 0.2-μm Y-Shaped Gate AlGaAs/InGaAs E/D-HJFETs (Special Issue on Ultra-High-Speed IC and LSI Technology)
- A 1.3V Supply Voltage AlGaAs/InGaAs HJFET SCFL D-FF Operating at up to 10Gbps (Special Issue on Ultra-High-Speed LSIs)
- Temperature Dependence of Luminescence Decay Time of InP Quantum Disks
- Lateral Composition Modulation Induced Structural Anisotropy in InP/GaInP Quantum Dot System
- Size Quantization in InAs/GaAs Self-Assembled Quantum Dots Grown by Gas-Source Molecular Beam Epitaxy
- Spot-Size-Converter Integrated Semiconductor Optical Amplifiers for Optical Switching Systems (Joint Special Issue on Photonics in Switching : Systems and Devices)
- Spot-Size-Converter Integrated Semiconductor Optical Amplifiers for Optical Switching Systems (Joint Special Issue on Photonics in Switching : Systems and Devices)
- Photonic Integrated Circuits Fabricated by Bandgap-Energy-Controlled Selective MOVPE Technique
- Microwave Performance of 0.3-μm Gate-Length Multi-Finger AlGaN/GaN Heterojunction FETs with Minimized Current Collapse
- Ultrafast All-Optical Signal Processing With Mode-Locked Semiconductor Lasers
- Dislocation propagation in GaN films formed by epitaxial lateral overgrowth
- Improved High-Temperature and High-Power Characteristics of 1.3-μm Spot-Size Converter Integrated All-Selective Metalorganic Vapor Phase Epitaxy Grown Planar Buried Heterostructure Laser Diodes by Newly Introduced Multiple-Stripe Recombination Layers
- Recovery Dynamics Analysis of Saturable Absorber Optical Gates by Optical Sampling
- ECL-Compatible Low-Power-Consumption 10-Gb/s GaAs 8 : 1 Multiplexer and 1 : 8 Demultiplexer (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Wavelength-Division Multiplexing Switches Using Free-Space Optics
- AlGaAs/GaAs HBT ICs for 20-Gb/s Optical Transmission Systems (Special Issue on Ultra-High-Speed IC and LSI Technology)
- AlGaAs/GaAs Heterojunction Bipolar Transistor ICs for Optical Transmission Systems (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functioions and Size-Reductions)
- High-Quality GaAs/AlAs Buried Heterostructures Grown by Molecular Beam Epitaxy on Patterned Substrates
- Band Line-up of InAsP/InAlGaAs Quantum Well