スポンサーリンク
Optoelectronics Technology Research Laboratory | 論文
- A New Method for Atomic-Layer-Controlled Molecular Beam Epitaxy of GaAs Exploiting the Desorption of the Excess Ga Atoms
- The Mechanism of Self-Limiting Growth of Atomic Layer Epitaxy of GaAs by Metalorganic Molecular Beam Epitaxy Using Trimethylgallium and Arsine
- Desorption of the Excess Gallium Atoms at the Surface of Gallium Arsenide and Application to Atomic Layer Epitaxy
- Real-Time Observation of GaAs (001) Surfaces During Molecular Beam Epitaxy by Scanning Microprobe Reflection High Energy Electron Diffraction : Surfaces, Interfaces and Films
- Role of Excess Bi in SrBi_2Ta_2O_9 Thin Film Prepared Using Chemical Liquid Deposition and Sol-Gel Method
- Emission Profile Dependence of Microcavity Light Emitting Diodes
- Thermal Quenching of the Photoluminescence of InGaAs/GaAs Single Quantum Wells Adjacent to a Selectively Oxidized AlAs Layer
- Shape of the GaInAs/InP Multiquantum Well Potential Observed by Scanning Tunneling Microscopy
- Effects of High-Temperature Annealing on the Structural and Crystalline Qualities of GaAs Heteroepitaxial Layers Grown on Si Substrates Using Two-Step and Direct Methods by Molecular-Beam Epitaxy
- Optical Matrix Elements in (110)-Oriented Quantum Wells
- Multi-chamber Ultrahigh Vacuum Scanning Tunneling Microscope System for Investigating Processed GaAs Surfaces and Observation of Argon-Ion-Bombarded GaAs Surfaces
- Scanning Tunneling Microscopy of Initial Stages of GaAs Heteroepitaxy on Lattice-Mismatched Substrates
- Role of Steps in GaAs Heteroepitaxial Growth on InAs(001) Surfaces
- Step Structures on Vicinal InAs (001) under (2×4) and (4×2) Surface Reconstructions
- Straight Step Edge Formation on an InAs(001) Vicinal Surface by the Transition of Surface Reconstruction
- Shape Transition of GaAs Islands Grown on InAs (001) Surfaces
- InAs Island Formation Aligned along the Steps on a GaAs(001) Vicinal Surface
- Thermal Properties of 1.3 μm AlGaInAs Multi Quantum Well Ridge Waveguide Lasers
- High Temperature Operation of AlGaInAs Ridge Waveguide Lasers with a p-AlInAs Electron Stopper Layer
- Analysis of GaAs MOMBE Reactions by Mass Spectrometry