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Optoelectronics Technology Research Laboratory | 論文
- Time-Resolved Photoluminescence Study on a Hetero Interface Formed by Direct Regrowth of GaAs on an Al_Ga_As Surface Prepared by an In Situ HCl Gas Etching Process
- GaOH : Unstable Species Liberated from GaAs Surface Oxides during Atomic Hydrogen Cleaning
- Low-Temperature Surface Cleaning of GaAs Using Trisdimethylaminoarsine
- Effect of Hydrogen Radicals on the Reduction of Carbon Incorporation into GaAs Grown by Using Trimethylgallium
- Observations of Anomalous Droplet Formation during the Molecular Beam Epitaxy of AlAs on GaAs (111)B Surfaces with an Alternating Source Supply
- Enhancement of Quantum-Confined Stark Effect in GaAs-AlGaAs Quantum Wells by Quantization along the [111] Axis
- Effects of Electron Beam Irradiation and Subsequent Cl_2 Exposure on Photo-Oxidized c(4×4) GaAs : Mechanism of In Situ EB Lithographic Patterning
- Temperature Dependence of the Reflected Trimethylgallium Flux Intensity from a GaAs Surface in Metal-Organic Molecular Beam Epitaxy Measured by Mass Spectrometry
- Molecular Beam Epitaxy of GaAs/AlAs on Mesa Stripes along the [001] Direction for Quantum-Wire Fabrication
- Temperature-Programmed Scattering (TPS) Study on Reactivity Difference of GaAs and GaAs Oxide Surfaces
- In Situ Observations of GaAs Initial Growth on Si Substrates Studied Using an Ultrahigh-Vacuum Transmission-Electron Microscope/Molecular-Beam Epitaxy System
- Combined Effects of High-Energy Si, Zn and Ga Ion Implantation and Annealing on the Reduction of Threading Dislocations in GaAs on Si
- GaAs Oxide Removal Using Hydrogen Plasma Studied by Surface Second-Harmonic Generation
- In-Situ Surface Second-Harmonic Generation Study of Epitaxial Growth of GaAs
- Optical Interconnections as a New LSI Technology (Special Issue on Opto-Electronics and LSI)
- Extreme Optical Anisotropy in (110) Quantum Wells Induced by [110] Uniaxial Stress
- Initial Growth of GaAs on Vicinal Si(111) Substrates by Molecular-Beam Epitaxy
- Characterization of GaAs Films Grown on Vicinal Si(110) Substrates by Molecular-Beam Epitaxy
- GaAs Heteroepitaxial Growth on an InP (001) Substrate
- Selective Area Epitaxial Growth of GaAs Using Metal Gallium and Trisdimethylaminoarsine