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Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation | 論文
- Improvement of InP Crystal Quality on GaAs Substrates by Thermal Cyclic Annealing
- A Q-Band High Gain, Low Noise Variable Gain Amplifier Using Dual Gate AlGaAs/InGaAs Pseudomorphic HEMTs
- A Super Low Noise AlInAs/InGaAs HEMT Fabricated by Selective Gate Recess Etching
- An Ultra Low Noise 50-GHz-Band Amplifier MMIC Using an AlGaAs/InGaAs Pseudomorphic HEMT
- GaAs 10 Gb/s 64:1 Multiplexer/Demultiplexer Chip Sets (Special Issue on Ultra-High-Speed LSIs)
- Low Power Dissipation GaAs DCFL 2.5 Gbps 16-bit Multiplexer/Demultiplexer LSIs
- MMIC/Super-MIC/MIC-Combined C- to Ku-Band 2 W Balanced Amplifier Multi-Chip Module (Special Issue on Microwave and Millimeterwave High-power Devices)
- Analysis of Gate Lag in GaAs Metal-Semiconductor Field-Effect Transistor Using Light Illumination
- Millimeter-Wave Monolithic AlGaAs/InGaAs/GaAs Pseudomorphic HEMT Low Noise Amplifier Modules for Advanced Microwave Scanning Radiometer
- A New GaAs Negative Voltage Generator for a Power Amplifier Applied to a Single-Chip T/R-MMIC Front-End
- Metalorganie Vapor Phase Epitaxy Growth of Be-Doped InP Using Bismethylcyelopentadienyl-Berylium
- A Wideband Monolithic Lossy Match Power Amplifier Having an LPF/HPF-Combined Interstage Network
- Analysis of High Power Amplifier Instability due to f_0/2Loop Oscillation
- Simulation of Collector Current Distribution in Heterojunction Bipolar Transistors Using Newly Proposed Empirical Expression
- High Efficiency AlGaAs/GaAs Power HBTs at a Low Supply Voltage for Digital Cellular Phones (Special Issue on Microwave and Millimeterwave High-power Devices)
- Focused Ion Beam Trimming Techniques for MMIC Circuit Optimization (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functioions and Size-Reductions)
- A Study on Reliability and Failure Mechanism of T-Shaped Gate HEMTs (Special Section on Reliability)
- Effect of Lens Aberration on Resist Pattern Profiles in Edge-Line Phase-Shift Method
- 1.3μm High Performance FS-BH Laser Diodes with Waveguide Lens for Optical Access Network (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
- Long-Wavelength Receiver Optoelectronic Integrated Circuit on 3-Inch-Diameter GaAs Substrate Grown by InP-on-GaAs Heteroepitaxy