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OPTO-ELECTRONICS RESEARCH LABORATORIES, NEC CORPORATION | 論文
- Very Low Threshold AlGaAs/GaAs Quantum Well Lasers Fabricated by Self-Aligned Impurity Induced Disordering
- Compact Magneto-Optical Head Module Integrated with Chip Elements using Double Holograms
- Thin Optical Head with Flip-Chip Bonded Module for Compact Disc Read Only Memory Drives
- Lateral Mode Localization in Multistripe Laser Diode
- A Short-Span Optical Feeder for Wireless Personal Communication Systems Using Multimode Fibers (Special Issue on Optomicrowave Techniques and Their Applications)
- Performance Improvement in Optical Fiber Feeders for Microcellular Mobile Radio Systems
- Optical Feeder Basic System Design for Microcellular Mobile Radio (Special Issue on Fiber-optic Microcelluler Radio Communication System and Their Technologies)
- Reflection Induced Degradations in Optical Fiber Feeder for Microcellular Mobile Radio Systems (Special Issue on Optical/Microwave Interaction Devices, Circuits and Systems)
- Monolayer Halftone Phase-Shifting Mask for KrF Excimer Laser Lithography
- In Situ Monitoring of Al Growth in Chemical Vapor Deposition by Detecting Reflected Laser Light Intensity
- Low Loss 1-2 GHz SAW Filters with Submicron Finger Period Electrodes : Communication Devices and Materials
- Short-Range Ordered Structure of Ga_In_As Studied by Energy-Filtered Electron Diffraction and HREM
- Dark Current and Breakdown Analysis in In(Al)GaAs/InAlAs Superlattice Avalanche Photodiodes
- Band Offset Dependance on Impact Ionization Rates in InAlGaAs Staircase Avalanche Photodiodes
- Doping Properties of Zinc in InAlGaAs Grown by Low-Pressure Metal-Organic Vapor-Phase Epitaxy
- InAlGaAs Staircase Avalanche Photodiodes
- AlGaAs/GaAs Heterojunction Bipolar Transistor ICs for Optical Transmission Systems (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functioions and Size-Reductions)
- A Precise Method for Determining AlGaAs/GaAs HBT Large-Signal Circuit Parameters Using Bias-Dependent Noise Parameters and Small-Signal S-Parameters
- Anisotropic Optical Matrix Elements in Quantum Wells with Various Substrate Orientations
- VPE-Grown 1.3 μm InGaAsP/InP Double-Channel Planar Buried-Heterostructure Laser Diode with LPE-Burying Layers