Band Offset Dependance on Impact Ionization Rates in InAlGaAs Staircase Avalanche Photodiodes
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概要
- 論文の詳細を見る
Electron (α) and hole (β) impact ionization rates in InAlGaAs staircase avalanche photodiodes with different sawtooth conduction band offset (ΔE_c) values were determined using photomultiplication measurements. The α/β ratio was found to be enhanced from 3.6 to 5.1 by increasing ΔE_c from 0.3 eV to 0.5 eV, the largest value in this system, under a 470 kV/cm electric field. Internal electric field and hole cooling effects in the distinct sawtooth band structure were studied in relation to the obtained data.
- 社団法人応用物理学会の論文
- 1995-08-15
著者
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Tsuji Masayoshi
Opto-electronics Research Laboratories Nec Corporation
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Makita Kikuo
Opto-electronics Research Laboratories Nec Corporation
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Makita K
Optoelectronics And High Frequency Device Research Laboratories
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Taguchi K
Department Of Electronics And Electrical Engieering Fukuyama University
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WATANABE Isao
Opto-Electronics Research Laboratories, NEC Corporation
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TAGUCHI Kenko
Opto-Electronics Research Laboratories, NEC Corporation
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WATANABE Isao
Technical Center, Calsonic Co., Ltd.
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Watanabe I
Technical Center Calsonic Co. Ltd.
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