InAlGaAs Staircase Avalanche Photodiodes
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概要
- 論文の詳細を見る
Metal-organic vapor phase epitaxy (MOVPE)-grown InAlGaAs staircase avalanche photodiodes (APDs) with sawtooth graded-gap multiplication regions are demonstrated for the first time. Extremely high multiplication factors M of over 100, low dark currents of 550 nA at M=20, and high-gain-bandwidth products exceeding 100 GHz were confirmed in 10×200-Å sawtooth multilaver APDs
- 社団法人応用物理学会の論文
- 1994-01-01
著者
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Tsuji Masayoshi
Opto-electronics Research Laboratories Nec Corporation
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Makita Kikuo
Opto-electronics Research Laboratories Nec Corporation
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Makita K
Optoelectronics And High Frequency Device Research Laboratories
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Taguchi K
Department Of Electronics And Electrical Engieering Fukuyama University
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WATANABE Isao
Opto-Electronics Research Laboratories, NEC Corporation
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TAGUCHI Kenko
Opto-Electronics Research Laboratories, NEC Corporation
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WATANABE Isao
Technical Center, Calsonic Co., Ltd.
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Watanabe I
Technical Center Calsonic Co. Ltd.
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