Doping Properties of Zinc in InAlGaAs Grown by Low-Pressure Metal-Organic Vapor-Phase Epitaxy
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概要
- 論文の詳細を見る
The electrical and optical properties of Zn-doped InAlGaAs layers grown by low-pressure metal-organic vapor-phase epitaxy are studied with different Al contents. Hole concentration of InAlGaAs decreases with increasing Al content, which is due to the relationship between the Al content and the Zn acceptor binding energy derived from the low-temperature 2K photoluminescence spectra. The deterioration of Zn-doped InAlAs layers is observed in layers grown with a lower V/III gas-phase ratio, which is the result of an oxygen-related deep level.
- 社団法人応用物理学会の論文
- 1994-06-15
著者
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Tsuji Masayoshi
Opto-electronics Research Laboratories Nec Corporation
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Makita Kikuo
Opto-electronics Research Laboratories Nec Corporation
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Makita K
Optoelectronics And High Frequency Device Research Laboratories
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Taguchi K
Department Of Electronics And Electrical Engieering Fukuyama University
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TAGUCHI Kenko
Opto-Electronics Research Laboratories, NEC Corporation
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