Dark Current and Breakdown Analysis in In(Al)GaAs/InAlAs Superlattice Avalanche Photodiodes
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概要
- 論文の詳細を見る
We studied and compared the reverse-bias characteristics of In(Al)GaAs/InAlAs Superlattice Avalanche Photodiodes (SL-APDs) for three types of different well structures. Dark current characteristics were drastically improved in the InAlGaAs quaternary well structure application, compared with InGaAs wells. In the InAlGaAs quaternary well SL-APDs, we observed, for the first time, a linear relation between dark current and multiplication factor. A multiplied dark current of 2.0×10^<-4> A/cm^2 was the lowest values for the SL-APDs. We also confirmed the temperature coefficient of breakdown voltage to be abotut 3.4×10^<-4> K^<-1>. This small temperature dependence suggests a distinctive SL-APD avalanche mechanism due to the contribution of large conduction band discontinuity.
- 社団法人応用物理学会の論文
- 1996-06-15
著者
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Tsuji Masayoshi
Opto-electronics Research Laboratories Nec Corporation
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Makita Kikuo
Opto-electronics Research Laboratories Nec Corporation
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Makita K
Optoelectronics And High Frequency Device Research Laboratories
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Taguchi K
Department Of Electronics And Electrical Engieering Fukuyama University
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WATANABE Isao
Opto-Electronics Research Laboratories, NEC Corporation
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TAGUCHI Kenko
Opto-Electronics Research Laboratories, NEC Corporation
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WATANABE Isao
Technical Center, Calsonic Co., Ltd.
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Watanabe I
Technical Center Calsonic Co. Ltd.
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