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Ntt Photonics Laboratories | 論文
- Polarization Control of VCSEL on (311) B Substrate and Its Effects on Transmission Characteristics(Special Issue on Optical Interconnects/Optical Signal Processing)
- 1.3-μm Surface-Normal Reflective Optical Modulators Based on the Wannier-Stark Effect in InP/InGaAsP Superlattices
- Loss reduction of silica-based 8 × 8 optical matrix switch by optimizing waveguide crossings using WFM method
- Highly Reliable Submicron InP-Based HBTs with over 300-GHz f_t
- High-performance and reliable InP/InGaAs HBTs operating at high current density (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- High-performance and reliable InP/InGaAs HBTs operating at high current density (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- High-Speed, Low-Driving-Voltage Dual-Drive InP-Based Mach-Zehnder Modulator
- Novel Stacked Packaging Structure Using Silica-Based PLC with Integrated Micro-Mirrors and Its Application to 8ch PD Array Module(Optical Interconnection, IS-EMD2004-Recent Development of Electro-Mechanical Devices)
- Novel Stacked Packaging Structure Using Silica-based PLC with Integrated Micro-mirrors and its Application to an 8ch PD Array Module(Session 1 : Optical Interconnection)
- アプリケーションソフトウェア構成要素の個別監視を用いた通信サービス運用管理方式の一検討
- 160-Gbit/s Full Channel Optical Time-Division Demultiplexer Based on SOA-Array Integrated PLC and Its Application to OTDM Transmission Experiment(Fiber-Optic Transmission for Communications)
- Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's Dehydrogenated by an Anneal after Emitter Mesa Formation
- Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's De-Hydrogenated by an Anneal after Emitter Mesa Formation
- Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition
- Ultrahigh-Speed InP/InGaAs Double-Heterostructure Bipolar Transistors and Analyses of Their Operation
- Growth and Characterization of High-Speed Carbon-Doped-Base InP/InGaAs Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition
- Growth, Design and Performance of InP-Based Heterostructure Bipolar Transistors
- Effects of a Compositionally-Graded In_xGa_As Base in Abrupt-Emitter InP/InGaAs Heterojunction Bipolar Transistors
- Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors
- Thick On-Chip Interconnections by Cu-Damascene Processes Using a Photosensitive Polymer