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Ntt Electrical Communications Laboratories | 論文
- Si Diffusion in Compositional Disordering of Si-Implanted GaAs / AlGaAs Superlattices Induced by Rapid Thermal Annealing : Semiconductors and Semiconductor Devices
- Gas Source Molecular Beam Epitaxy of GaP Using PH_3 Decomposed by Low Energy Electron Impact
- Compositional Disordering of Si-Implanted GaAs/AlGaAs Superlattices by Rapid Thermal Annealing
- A Method for Evaluating Birefringence in Plastic Substrates of Magneto-optical Disks : MEDIA
- Preparation of Elevated NA Fluoride Optical Fibers
- Properties of Ion-Beam-Sputtered Ni/Fe Artificial Lattice Film
- Photochromic Mechanisms in Deposited Spiran Thin Film : MEDIA
- Nonlinear Optical Absorption of InP Doping Superlattice
- Nonlinear Polarization Changes in a Birefringent Fiber
- Temperature Range for DFB Mode Oscillation in 1.5 μm InGaAsP/InP DFB Lasers
- Enhancement of Gamma-Ray Tolerance in Forward-Biased AlGaAs and GaInAsP Light-Emitting Diodes
- Lateral GaAs Photodetector Fabricated by Ga Focused-Jon-Beam Implantation
- Electrical Properties of Ga Ion Beam Implanted GaAs Epilayer
- Recovery Characteristics of Radiation Damage in MOS Devices
- High-Resolution X-Ray Scattering Topography Using Synchrotron Radiation Microbeam
- DISPLAY APPLICATIONS IN TELECOMMUNICATIONS(International Workshop on Information Display-a Satellite Meeting of Japan Display '86-)
- Fabrication of SiO_2-GeO_2 Glass by the Sol-Gel Method
- Josephson Junctions Observed in La_Sr_CuO_4 Superconducting Polycrystalline-Films
- Barrier Height in Indirect Bandgap AlGaAs/GaAs Hetero-Junction Determined with n-Semiconductor/Insulator/Semiconductor Diodes
- Thermal Desorption from Si(111) Surfaces with Native Oxides Formed During Chemical Treatments