Electrical Properties of Ga Ion Beam Implanted GaAs Epilayer
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概要
- 論文の詳細を見る
Resistivity enhancement by 5 orders or more was realized by Ga focused ion beam implantation into n^+ and p^- GaAs epilayers. For originally n^+ epilayers, this resistivity enhancement is maintained after annealing as high as 800℃. However this enhancement disappears after annealing at above 650℃ for p^- epilayer. This property makes GaAs high resistive only in a limited area whose minimum dimension is 0.1 μm or less, and is attractive for a device fabrication process to electrically isolate integrated elements.
- 社団法人応用物理学会の論文
- 1985-12-20
著者
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OKAMOTO Hiroshi
NTT Electrical Communications Laboratories
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Hirayama Yoshiro
Ntt Electrical Communications Laboratories
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