Lateral GaAs Photodetector Fabricated by Ga Focused-Jon-Beam Implantation
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概要
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A photodetector with lateral GaAs n^+-π-n structure is studied. This structure is fabricated by Ga ion implantation into n^+-GaAs epilayer on a semi-insulating GaAs substrate using focused-ion-beam (FIB) technology. This photodetector behaves as a phototransistor in low-bias region and avalanche multiplication appears beyond a breakdown voltage. Multiplication gain of more than 50 and impulse response of less than 200 ps were obtained. These characteristics make this device suitable for application in monolithic optoelectronic circuits.
- 社団法人応用物理学会の論文
- 1986-07-20
著者
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OKAMOTO Hiroshi
NTT Electrical Communications Laboratories
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Hirayama Yoshiro
Ntt Electrical Communications Laboratories
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IGUCHI Hidehiko
NTT Electrical Communications Laboratories
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