Enhancement of Gamma-Ray Tolerance in Forward-Biased AlGaAs and GaInAsP Light-Emitting Diodes

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概要

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• Bias dependence of light output degradation cuased by gamma-ray irradiation has been investigated for AlGaAs and GaInAsP LEDs. When the device is forward-biased during irradiation, the light output degradation is reduced for both AlGaAs and GaInAsP LEDs. Isochronal and current annealings carried out after exposure to a gamma-ray dose of 10^8 rad(Si) reveal that this reduction in degradation is attributable to annealing enhanced by carrier injection.

• 社団法人応用物理学会の論文
• 1986-01-20

著者

• Takagi Toru

  Ntt Electrical Communications Laboratories

関連論文

• Enhancement of Gamma-Ray Tolerance in Forward-Biased AlGaAs and GaInAsP Light-Emitting Diodes

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