Recovery Characteristics of Radiation Damage in MOS Devices
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概要
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Experimental evidence of a larger threshold-voltage (V_T) recovery for an n-channel MOSFET than for a p-channel MOSFET, after receiving ionizing radiation, is presented. Annealing of a parasitic leakage current, generated only for n-channel MOSFETs due to a field inversion during irradiation, is shown to be the main cause for a channel-type dependence for V_T recovery.
- 社団法人応用物理学会の論文
- 1986-06-20
著者
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Shiono Noboru
Ntt Electrical Communications Laboratories
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Shimaya Masakazu
Ntt Electrical Communications Laboratories
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Ushizaka Hironori
Ntt Electrical Communications Laboratories