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Ntt Electrical Communications Laboratories | 論文
- Frequency Trimming of SAW Devices by Sputter Etching : SAW and Communication Devices
- Decrease in Electrical Resistivity of W Films on GaAs Substrates after High-Temperature Annealing
- Electron Conduction in an Atomic-Layer-Doped GaAs Plane : Electrical Properties of Condensed Matter
- Reduction of Deep Level Concentration in GaAs Layers Grown by Flow-Rate Modulation Epitaxy : Condensed Matter
- Observation of Transient Behavior of GaAs MBE Growth by RHEED Oscillation
- Molecular Beam Epitaxial Growth of GaAs with Arsenic Molecules Transported by Hydrogen Gas
- Modulation Doped n-AlGaAs/GaAs Heterostructures Grown by Flow-rate Modulation Epitaxy
- Simultaneous Observation of RHEED Oscillation during GaAs MBE Growth with Modulated Electron Beam
- Flow-Rate Modulation Epitaxy of GaAs
- Fabrication of All-Nb Josephson Junctions Using Oxidized Zr Overlayers
- Ellipsometric Study of Nb-Al-AlO_x Layered Structure for All-Refractory Josephson Junctions
- Fluoride Barriers in Nb/Pb Josephson Junctions
- Fabrication of A15 Nb_3Al Josephson Tunnel Junction using CF_4 Cleaning Process
- An Ellipsometric Study of Oxide Growth on Nb, Al and Nb_3Al Films by rf Plasma
- The Effect of Minor Elements on Exothermic Fusion Reaction to Form a Ti-Ni Intermetallic Compound
- マルコフ再生入力と超指数サービス時間をもつ無限サーバモデルの解析
- PH/M/S/K型待ち行列の過渡現象
- High Threshold Voltage Reproducibility for WSi/Al_xGa_As/GaAs MIS-Like Heterostructure FET
- RESUABLE DESIGN METHODOLOGY FOR SWITCHING SOFTWARE
- An Indium-Free MBE Growth of AlGaAs/GaAs HBTs