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Ntt Corp. Atsugi Jpn | 論文
- Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
- Fabrication of double-dot single-electron transistor in silicon nanowire
- Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
- Fabrication of double-dot single-electron transistor in silicon nanowire
- Single-Electron-Resolution Electrometer Based on Field-Effect Transistor(Session4B: Emerging Devices II)
- Single-Electron-Resolution Electrometer Based on Field-Effect Transistor(Session4B: Emerging Devices II)
- Capacitive Parameter Extraction for Nanometer-Size Field-Effect Transistors
- Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- Multifunctional Boolean Logic Using Single-Electron Transistors(New System Paradigms for Integrated Electronics)
- Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor
- A Multiple-Valued Logic and Memory With Combined Single-Electron and Metal-Oxide-Semiconductor Transistors
- A Merged Single-Electron Transistor and Metal-Oxide-Semiconductor Transistor Logic for Interface and Multiple-Valued Functions
- Multipeak negative-differential-resistance device by combining single-electron and metal-oxide-semiconductor transistors
- A Merged SET-MOSFET Logic for Interface and Multiple-Valued Functions
- Voltage Gain of Si Single-Electron Transistor and Analysis of Performance of n-Metal-Oxide-Semiconductor Type Inverter with Resistive Load
- Single-Electron Detection in Si-Wire Transistors at Room Temperature
- Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
- A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
- Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
- Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors