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Ntt Corp. Atsugi Jpn | 論文
- Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
- Si Single-Electron Transistors on SIMOX Substrates (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Nanoampere charge pumping by single-electron ratchet using Si nanowire MOSFETs
- Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- Electroluminescence of AlAs/GaAs Disordered Superlattices
- Photoluminescent Properties of AlAs/Al_xGa_As (x=0.5) Disordered Superlattices
- Absorption Spectra and Photoluminescent Processes of AlAs/GaAs Disordered Superlattices
- Proposal and Experimental Results of Disordered Crystalline Semiconductors
- The effect of head motion on the accuracy of sound localization
- InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si
- InP/InGaAs Heterostructure Bipolar Transistors Grown at Low Temperature by Metalorganic Chemical Vapor Deposition
- Head-related transfer functions of the Mongolian gerbil in the median plane
- Responses of neurons in the inferior colliculus to a dynamic-level stimulus that simulates a sound source with varying distance
- Temporal characteristics of neural sensitivities to the interaural phase difference in the inferior colliculus
- Effect of Arrangement of Input Gates on Logic Switching Characteristics of Nanodot Array Device