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Ntt Basic Res. Lab. Kanagawa Jpn | 論文
- Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
- Sub-10-nm Si Lines Fabricated Using Shifted Mask Patterns Controlled with Electron Beam Lithography and KOH Anisotropic Etching
- Fabrication of One-Dimensional Silicon Nanowire Structures with a Self-Aligned Point Contact
- Critical Dimension Measurement in Nanometer Scale by Using Scanning Probe Microscopy
- An Electron Beam Nanolithography System and its Application to Si Nanofabrication
- Metrology of Atomic Force Microscopy for Si Nano-Structures
- Sn-Sb-Se/Sb-Bi Bilayer Phase-Change Media for High-Density Write-Once Optical Recording
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk : High Density Recording
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk
- Effect of Chelating Agents on High Resolution Electron Beam Nanolithography of Spin-Coatable Al_2O_3 Gel Films
- TEM Moire Pattern and Scanning Auger Electron Microscope Analysis of Anomalous Si Incorporation into MBE-grown Ge on Si(111)
- Reflection High-Energy Electron Diffraction Studies of Vicinal Si(111) Surfaces
- Observation of Room Temperature Excitons in GaSb-AlGaSb Multi-Quantum Wells
- Compositional Disordering of GaAs-Al_xGa_As Superlattice by Ga Focused Ion Beam Implantation and its Application to Submicron Structure Fabrication
- Edge-Enhancement Writing for Electron Beam Nanolithography
- Real-Time Observation of (1×1)-(7×7) Phase Transition on Vicinal Si(111) Surfaces by Scanning Tunneling Microscopy
- Mechanism of Etch Stop in High Aspect-Ratio Contact Hole Etching
- High-Mobility Inverted Modulation-Doped GaAs/AlGaAs Heterostructures
- Waveguide-Type Optical Modulator of GaAs Quantum Well Double Heterostructures Using Electric Field Effect on Exciton Absorption
- Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures