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Ntt Basic Res. Lab. Kanagawa Jpn | 論文
- Room Temperature Operation of Al_Ga_Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy
- A Segmented Electrode Multi-Quantum-Well Laser Diode
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs-GaAs Superlattices
- Optical Absorption Characteristics of GaAs-AlGaAs Multi-Quantum-Well Heterostructure Waveguides
- Several- and Many-Electron Artificial-Atoms at Filling Factors between 2 and 1
- Gate Performance in Resonant Tunneling Single Electron Transistor (Special Issue on Technology Challenges for Single Electron Devices)
- Technologies for Artificial Semiconductor Atoms
- Vertical Single Electron Transistors With Separate Gates ( Quantum Dot Structures)
- Atomic-Like Properties of Semiconductor Quantum Dots ( Quantum Dot Structures)
- GaAs/AlGaAs/InGaAs Vertical Triple Barrier Single Electron Transistors
- GaAs/AlGaAs/InGaAs Vertical Triple Barrier Single Electron Transistors
- Sub-Micron Vertical AlGaAs/GaAs Resornarnt Tunneling Single Electron Transistor
- Quantized Conductance Observed in Quantum Wires 2 to 10 μm Long
- Multi-Beam Optical Disk Drive for High Data Transfer Rate Systems : Drive Technology
- Multi-Beam Optical Disk Drive for High Data Transfer Rate Systems
- Characterization of a DC Arcjet Plasma for Diamond Growth by Measurement of Spatial Distributions of Optical Emission
- Numerical Simulation of Buffer Flow in a Free Flow Electrophoresis Chamber
- In Situ X-Ray Monitoring of Metalorganic Vapor Phase Epitaxy
- Improved Self-Aligned Structure for GaAlAs High-Power Lasers
- Superior Pinch-Off Characteristics at 400℃ in AlGaN/GaN Heterostructure Field Effect Transistors