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Ntt Basic Res. Lab. Kanagawa Jpn | 論文
- Phase Coherence Length in Planar Doped Thin GaAs Wires Fabricated by Ion Beam Etching : Microfabrication and Physics
- Phase Coherence Length in Planar Doped Thin GaAs Wires Fabricated by Ion Beam Etching
- Linewidth Fluctuations Caused by Polymer Aggregates in Resist Films
- Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
- Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
- Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation
- Increase in Switching Charge of Ferroelectric SrBi_2Ta_2O_9 Thin Films with Polarization Reversal
- Preparation and Electrical Properties of PZT Thin Film Capacitors for Ferroelectric Random Access Memory
- Conspicuous Voltage Shift of D-E Hysteresis Loop and Asymmetric Depolarization in Pb-Based Ferroelectric Thin Films
- Preparation of La-Modified Lead Titanate Film Capacitors and Influence of SrRuO_3 Electrodes on the Electrical Properties
- Characterization of Niobium-Doped Lead Titanate Thin Films
- Electrical Properties of LiNbO_3 Thin Films by RF Magnetron Sputtering and Bias Sputtering
- Preparation and Optical Waveguide Properties of LiNbO_3 Thin Films by IF Magnetron Sputtering
- Theoretical Study on Surface Acoustic Wave Characteristics of LiNbO_3 Films on Sapphire Substrates
- In-plane Observations of RF-sputtered LiNbO_3 Thin Films Using an Energy Dispersive Total-Reflection X-Ray Diffractometer
- Giant Surface Acoustic Wave Attenuation in the Quantum Hall Regime Induced by a DC Current
- Giant Surface Acoustic Wave Attenuation in the Quantum Hall Regime Inducedby a DC Current
- Resist Thinning Effect on Nanometer-Scale Line-Edge Roughness : Instrumentation, Measurement, and Fabrication Technology
- Suppressed Aggregate Extraction Development (SAGEX) Resists
- A New Approach to Reducing Line-Edge Roughness by Using a Cross-Linked Positive-Tone Resist