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New Industry Creation Hatchery Center, Tohoku University | 論文
- Impact of fully depleted silicon-on-insulator accumulation-mode CMOS on Si(110) (シリコン材料・デバイス)
- MOS Transistors fabricated on Si(551) surface based on radical reaction processes
- High performance accumulation mode FD-SOI MOSFETs on Si(110) and (110) surfaces (シリコン材料・デバイス)
- High Performance and Highly Reliable Novel CMOS Devices Using Accumulation Mode Fully Depleted SOI MOSFETs
- Pretreatment of Biomass by water and Co-solvents at High-Temperature and High-Pressure Condition
- Development of Accelerated Large-Scale Electronic Structure Calculation Program for Designing of Rare Earth Phosphors
- A Theoretical Study of the Effect of Eu ion Dopant on the Electronic Excitations of Yttrium Oxide and Yttrium Oxy-Sulphide
- A Theoretical Study on Influence of Oxygen Vacancies on the Electronic Properties of Indium Oxide and Indium Tin Oxide
- A Theoretical Study : Effect of Eu and Er ion Dopant on the Electronic Excitations of Yttrium Oxide and Yttrium Oxy-Sulphide
- Tight-Binding Quantum Chemical Calculations of Electronic Structures of Indium Tin Oxide
- The data analysis technique of the atomic force microscopy for the atomically flat silicon surface(Session9A: Silicon Devices IV)
- The data analysis technique of the atomic force microscopy for the atomically flat silicon surface(Session9A: Silicon Devices IV)
- Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic- and Accumulation-Mode MOSFETs
- Application of Screen-Printed Catalytic E1ectrodes to MEMS-Based Fuel Cells (特集:燃料電池を支えるMEMS/NEMS技術)
- Time Response of One-Dimensional Photonic Crystals with a Defect Layer Made of Semiconductor Quantum Dots
- Novel Reporter Gene Expression Systems for Monitoring Activation of the Aspergillus nidulans HOG Pathway
- Highly Reliable MOS Trench Gate FET by Oxygen Radical Oxidation
- Improved J-E Characteristics and Stress Induced Leakage Currents (SILC) in Oxynitride Films Grown at 400℃ by Microwave-Excited High-Density Kr/O_2/NH_3 Plasma
- Low Temperature Gate Oxidation MOS Transistor Produced by Kr/O_2 Microwave Excited High-Density Plasma
- Ultra-Thin Silicon Oxynitride Film Grown at Low-Temperature by Microwave-Excited High-Density Kr/O_2/N_2 Plasma