MOS Transistors fabricated on Si(551) surface based on radical reaction processes

概要

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Though the electron mobility in the channel of MOSFET on Si(100) surface which is currently used for LSI devices is largest of all, the hole mobility is smallest. We have reported that the high quality gate insulator films can be formed on any oriented silicon surfaces by using radical oxidation and radical nitridation. Then, We can use Si(551) surface for fabricating the LSI devices. Si(551) is a surface orientation where 8゜off from the Si(110) in <100> direction and is hard to be roughened by alkali solutions. The hole mobility in Si(551) surface is almost as large as Si(110). We demonstrate the high performance CMOS by fabricating accumulation mode MOSFETs on Si(551) surface.
社団法人電子情報通信学会の論文
2009-06-17